TERMIUM Plus®

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multiple gate MOSFET [1 record]

Record 1 2010-05-19

English

Subject field(s)
  • Semiconductors (Electronics)
CONT

A segmented multiple gate MOSFET utilizing a single level of polysilicon gate layer was fabricated and characterized. Data is presented for both p- and n- channel devices in which the polysilicon gate layer is segmented into three separate lateral gates by alternate p- and n- type doping.

Key term(s)
  • multiple gate MOS transistor

French

Domaine(s)
  • Semi-conducteurs (Électronique)
CONT

Mémoires à transfert de charges : Ce sont des registres à décalage constitués d'une succession d'électrodes, qui se présentent comme des transistors MOS à grilles multiples.

Spanish

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